镓

CAS号：74974-60-0

品名：三氟甲磺镓Gallium(III)Trifluoromethanesulfonate

中文别名：三氟甲磺酸镓;三氟甲基磺酸镓;三氟甲烷磺酸镓;

英文别名：gallium,trifluoromethanesulfonate;

分子式：C3F9GaO9S3

分子量：516.93

精确质量：515.782

Psa：196.74

密度：1.7g/cm3

沸点：162ºC at 760 mmHg

安全说明：S25-S45-S36-S37-S39

危险类别码：R34

海关编码：2904909090

镓

CAS号：12024-14-5

品名：碲化镓(II)GALLIUMTELLURIDE

中文别名：碲化镓;

英文别名：GALLIUMTELLURIDE

分子式：GaHTe

分子量：198.331

精确质量：199.84

Psa：0.0

EINECS号：234-690-1

MDL号：MFCD00135536

密度：5.440

熔点：824°C

储存条件：<p>常温密闭，阴凉通风干燥处</p>

安全说明：S22; S24/25

危险类别码：R22; R36/37/38

危险品标志：Xn

生产方法：加热熔化按化学计量碲和镓的混合物可制得GaTe。

简介：Gallium(II)telluride,GaTe,isachemicalcompoundofgalliumandtellurium.ThereisresearchinterestinthestructureandelectronicpropertiesofGaTebecauseofthepossibilitythatit,orrelatedcompounds,mayhaveapplicationsintheelectronicsindustry.Galliumtelluridecanbemadebyreactingtheelementsorbymetalorganicvapourdeposition(MOCVD)..GaTeproducedfromtheelementshasamonocliniccrystalstructure.Eachgalliumatomistetrahedrallycoordinatedby3telluriumandonegalliumatom.Thegallium-galliumbondlengthintheGa2unitis2.43Angstrom.ThestructureconsistsoflayersandcanbeformulatedasGa24+2Te2−.Thebondingwithinthelayersisionic-covalentandbetweenthelayersispredominantlyvanderWaals.GaTeisclassifiedasalayeredsemiconductor(likeGaSeandInSewhichhavesimilarstructures).Itisadirectbandgapsemiconductorwithanenergyof1.65eVatroomtemperature.Ahexagonalformcanbeproducedbylowpressuremetalorganicvapourdeposition(MOCVD)fromalkylgalliumtelluridecubanese.g.from(t-butylGa(μ3-Te))4.Thesecubanesareso-calledbecausetheyhaveastructurerelatedtoC8H8,cubane.Thecoreconsistsofacubeofeightatoms,fourgallium,andfourtelluriumatoms.Eachgalliumhasanattachedt-butylgroupandthreeadjacenttelluriumatomsandeachtelluriumhasthreeadjacentgalliumatoms.Thehexagonalform,whichiscloselyrelatedtothemonoclinicform,containingGa24+units,convertstothemonoclinicformwhenannealedat500°C.