CAS:12024-14-5
12024-14-5
CAS号：12024-14-5
品名：碲化镓(II)GALLIUMTELLURIDE
中文别名：碲化镓;
英文别名：GALLIUMTELLURIDE
分子式：GaHTe
分子量：198.331
精确质量：199.84
Psa：0.0
EINECS号：234-690-1
MDL号：MFCD00135536
密度：5.440
熔点：824°C
储存条件：<p>常温密闭，阴凉通风干燥处</p>
安全说明：S22; S24/25
危险类别码：R22; R36/37/38
危险品标志：Xn
生产方法：加热熔化按化学计量碲和镓的混合物可制得GaTe。
简介：Gallium(II)telluride,GaTe,isachemicalcompoundofgalliumandtellurium.ThereisresearchinterestinthestructureandelectronicpropertiesofGaTebecauseofthepossibilitythatit,orrelatedcompounds,mayhaveapplicationsintheelectronicsindustry.Galliumtelluridecanbemadebyreactingtheelementsorbymetalorganicvapourdeposition(MOCVD)..GaTeproducedfromtheelementshasamonocliniccrystalstructure.Eachgalliumatomistetrahedrallycoordinatedby3telluriumandonegalliumatom.Thegallium-galliumbondlengthintheGa2unitis2.43Angstrom.ThestructureconsistsoflayersandcanbeformulatedasGa24+2Te2−.Thebondingwithinthelayersisionic-covalentandbetweenthelayersispredominantlyvanderWaals.GaTeisclassifiedasalayeredsemiconductor(likeGaSeandInSewhichhavesimilarstructures).Itisadirectbandgapsemiconductorwithanenergyof1.65eVatroomtemperature.Ahexagonalformcanbeproducedbylowpressuremetalorganicvapourdeposition(MOCVD)fromalkylgalliumtelluridecubanese.g.from(t-butylGa(μ3-Te))4.Thesecubanesareso-calledbecausetheyhaveastructurerelatedtoC8H8,cubane.Thecoreconsistsofacubeofeightatoms,fourgallium,andfourtelluriumatoms.Eachgalliumhasanattachedt-butylgroupandthreeadjacenttelluriumatomsandeachtelluriumhasthreeadjacentgalliumatoms.Thehexagonalform,whichiscloselyrelatedtothemonoclinicform,containingGa24+units,convertstothemonoclinicformwhenannealedat500°C.
镓
