CAS号:12056-07-4
品名:硒化铟(III)INDIUMSELENIDE
中文别名:硒化铟;
英文别名:diindiumtriselenide;Indiumselenide/99.9;
分子式:In2Se3
分子量:466.516
精确质量:469.557
Psa:0.0
EINECS号:235-016-9
MDL号:MFCD00016147
PubChem号:24865178
密度:5.67g/mLat 25°C(lit.)
熔点:890°C
安全说明:S20/21; S28; S45; S60; S61
危险类别码:R23/25
WGK Germany:3
危险品运输编码:UN 3283 6.1/PG 3
包装等级:III
危险品标志:T; N
信号词:Danger
危险性防范说明:P261; P273; P301 + P310; P311; P501
危险标志:GHS06, GHS08, GHS09
危险性描述:H301; H331; H373; H410
生产方法:通过In-Se熔融体的X射线衍射研究指出有四种二元化合物:In4Se3,InSe,In5Se6,In2Se3。在密闭的真空管中,按正确比例熔化组成元素能制得每种化合物。
简介:Indium(III)selenideisacompoundofindiumandselenium.Ithaspotentialforuseinphotovoltaicdevicesandithasbeenthesubjectofextensiveresearch.Thetwomostcommonphases,αandβ,havealayeredstructure,whileγisa\"defectwurtzitestructure.\"Inall,therearefiveknownforms(α,β,γ,δ,κ).Theα-βphasetransitionisaccompaniedbyachangeinelectricalconductivity.Theband-gapofγ-In2Se3isapproximately1.9eV.Thecrystallineformofasamplecandependonthemethodofproduction,forexamplethinfilmsofpureγ-In2Se3havebeenproducedfromtrimethylindium,InMe3,andhydrogenselenide,H2Se,usingMOCVDtechniques.